Search results for "Single crystal growth"
showing 5 items of 5 documents
Rotating magnetic fields as a means to control the hydrodynamics and heat/mass transfer in the processes of bulk single crystal growth
1999
The report discusses the possibility of using different types of rotating magnetic fields (RMF) and combinations of these to control the hydrodynamics and heat/mass transfer in the processes of bulk semiconductor single crystal growth. Some factors contributing to the efficiency of RMF influence in different technologies are analysed. Their specific practical application is illustrated by some examples.
Convective phenomena in large melts including magnetic fields
2007
The set of characteristic parameters which describe modern large industrial CZ silicon single crystal growth systems is introduced. The main melt flow driving mechanisms are considered, and the characteristic density values of various in the melt acting forces are estimated. The analysis is illustrated with examples of numerical simulation and comparisons with experiments.
Epitaxial Thin-Film vs Single Crystal Growth of 2D Hofmann-Type Iron(II) Materials: A Comparative Assessment of their Bi-Stable Spin Crossover Proper…
2020
Integration of the ON-OFF cooperative spin crossover (SCO) properties of FeII coordination polymers as components of electronic and/or spintronic devices is currently an area of great interest for potential applications. This requires the selection and growth of thin films of the appropriate material onto selected substrates. In this context, two new series of cooperative SCO two-dimensional FeII coordination polymers of the Hofmann-type formulated {FeII(Pym)2[MII(CN)4]·xH2O}n and {FeII(Isoq)2[MII(CN)4]}n (Pym = pyrimidine, Isoq = isoquinoline; MII = Ni, Pd, Pt) have been synthesized, characterized, and the corresponding Pt derivatives selected for fabrication of thin films by liquid-phase …
Numerical modelling of the industrial silicon single crystal growth processes
2007
Silicon wafers produced from the silicon single crystals are the basic material for the manufacturing of various kinds of electronic devices determining the everyday life of the modern society. Silicon single crystals industrially are mainly grown by two methods - by the Czochralski and by the floating zone technique. Both of them involve various physical processes with complex interactions which makes the experimental optimization of the growth techniques a rather hard and expensive task. Therefore, mathematical modelling supported by the rapid increase of the computer power has become an effective means in the development of the industrial crystal growth. (© 2007 WILEY-VCH Verlag GmbH & C…
Rotating magnetic fields as a means to control the hydrodynamics and heat transfer in single crystal growth processes
1999
The paper discusses a possibility to use different types of rotating magnetic fields (RMF) and combinations of these to control the hydrodynamics and heat/mass transfer in the processes of bulk semiconductor single crystal growth. Some factors contributing to the efficiency of RMF and their influence on different technologies are analyzed. Their specific practical application is illustrated by some examples.